摘要
本文介绍了用难熔金属钼栅作材料所制成的3μm沟道的CMOSFET,详细地说明了钼膜的制备、退火、刻蚀及钼膜的保护层和钼栅CMOS IC的工艺流程,给出了Mo栅CMOSFET的特性及单位栅宽的跨导值(mS/mm)。实验证实,Mo栅优于Al栅单沟道MOSFET的跨导。
GMOSFETs with 3μm Mo-gate are introduced in this paper. Formation, annealing and etching of the Mo film and a prdtective layer, which is necessary to prevent the film from oxidation, is described in detail. The process flow of Mo-gate CMOSFET IGs is also given. Compared with Al-gate MOSFETs, Mo-gate CMOSFETs show a better transconductance(mS/mm).
出处
《微电子学》
CAS
CSCD
1990年第3期36-41,共6页
Microelectronics
