摘要
在分析半绝缘(SI)砷化镓光导开关(PCSS)中丝状电流(流注)形成和传播的实验结果的基础上,提出了高增益砷化镓光导开关中的畴电子崩(EAD)理论.该理论完善了EAD概念,揭示了高增益GaAsPCSS中局域内的强电场作用和高载流子密度效应使非平衡载流子密度稳定增长,从而导致流注形成.应用EAD理论合理地解释了GaAsPCSS中电流丝的形成和传播,解释了在器件两端的偏置电场低于载流子本征碰撞电离的电场阈值条件下器件中存在载流子雪崩生长等实验现象,结果表明在这类具有转移电子效应的半导体器件中,EAD理论是分析流注形成的基本理论.
An electron avalanche domain （EAD） theory for the filamentary current （streamer） formation and propagation in semi-insulating （SI） GaAs photoconductive semiconductor switches （PCSS） has been derived from the analysis of the experiments. The theory perfects the EAD concept and reveals that the steady increase of the non-equilibrium carrier density for the strong electric field and the high carrier density effect can lead to form the streamer in the local area of the high gain GaAs PCSS. The EAD theory is used successfully to explain the following experimental phenomena happened in the high gain GaAs PCSS which include the formation and propagation of the current filament, the occurrence of carrier avalanche in SI GaAs PCSS when the bias field across the device is below the threshold electric field in GaAs for intrinsic impact ionization. The results show that the EAD theory is a generalized theory to analyze the streamer formation in such transferred-electron effect semiconductor devices.
出处
《科学通报》
EI
CAS
CSCD
北大核心
2011年第9期679-684,共6页
Chinese Science Bulletin
基金
国防探索项目资助(713ty1010)
关键词
光导开关
强电场作用
高载流子密度效应
稳定增长
畴电子崩
流注传播
photoconductive semiconductor switch （PCSS）
high electric field effect
high carrier density effect
steady increase
electron avalanche domain （EAD）
streamer propagation
