摘要
为实现高品质因数Q值的光学环腔器件,采用耦合模理论,仿真得出单直波导光学环腔器件的Q值与自耦合系数的关系曲线。以Si3N4为材料,采用与CMOS工艺相兼容的技术制备了波导宽度为2μm,半径为200μm的Si3N4单直波导光学环腔器件。在相同的制备工艺下,同一芯片中不同光学环腔的传输系数相同,通过设计器件中环腔与直波导的间距取得不同的自耦合系数,实验得出器件Q值与自耦合系数的关系,其结果与仿真相一致,因此得出了器件工作在低传输损耗及弱耦合条件下可以取得高Q值的结论。
The relationship between the Q factor and the self-coupling index of single straight waveguide microring resonator is studied by using coupling mode theory to realize high Q microring resonators.Then the resonators based on Si3N4 waveguides are fabricated by using CMOS compatible techniques with 2 μm wide waveguides and 200 μm in radius.The Q factor and its relation to the self-coupling index of the fabricated microring resonators are measured on the assumption that the resonators in the same batch own the same circulation factor.Therefore,lower transmission loss and smaller self-coupling index can produce higher Q factor of the device.
出处
《光电子.激光》
EI
CAS
CSCD
北大核心
2011年第5期697-700,共4页
Journal of Optoelectronics·Laser
关键词
光学环腔
Q值
仿真
制备
microring resonator
Q factor
simulation
fabrication