摘要
对不同氧流量下用直流磁控溅射法制备的ITO薄膜进行退火处理，并对退火后ITO薄膜的光电特性进行分析．结果表明，N2气氛下退火可以改善ITO薄膜的结晶性，同时使ITO薄膜质量得到优化，并显著提高ITO薄膜的透明性和电导性．
In this paper, we investigated the optical and electrical properties of ththnnealed ITo films prepared under different oxygen flow by reactive D. C. magnetron sputtering. The experiment results demonstrate that the optical and electrical properties of ITO films are lnfluenced greatly by annealing environment. Under N, atmosphere, annealing treatment could improve the crystallization of ITO films. On the other hand, the optical and electrical properties of lTO thin films also strongly depend on annealing time and annea1ing temperature. In general, anneaJng treatments can optimize the film properties and improve remarkably the transparency and conductivity of ITO films.
出处
《吉林大学自然科学学报》
CAS
CSCD
1999年第4期61-65,共5页
Acta Scientiarum Naturalium Universitatis Jilinensis
基金
中国科学院"九五"重大项目!KY951-A1-502
吉林省科委"九五"科技攻关项目!970103-01
关键词
ITO薄膜
氧空位
光学特性
电学特性
氧化铟薄膜
D. C. magnetron sputtering, ITO films, oxygen vacancies, annealing treatment, annealed environment
