摘要
纳米半导体硅(nc-Si:H)薄膜是利用等离子体增强化学气相淀积(PECVD)方法制备的,制备条件可以很好地进行调节控制。纳米硅薄膜由两种组元:纳米尺度晶粒组元和晶粒间的界面组元,即晶态相和晶界相组成。纳米半导体硅薄膜对发展半导体器件,例如量子功能器件和薄膜敏感器件等。
Hydrogenated nanocrystalline silicon(nc Si:H)films can be prepared by plasma enhanced chemical vapor deposition(PECVD) method under excellently controlled deposition conditions The nc Si:H film consists of a mass of nanometer scale grains and an interfacial region, i e the crystalline phase and the grain boundary phase It is especially valuable for some devices, for example, quantum function devices and film sensors etc
出处
《微电子学》
CAS
CSCD
北大核心
1999年第6期385-389,共5页
Microelectronics
关键词
半导体材料
纳米电子学
纳米硅薄膜
Semiconductor materials
Nanocrystalline materials
Nanoelectronics
Nanocrystalline silicon film
Quantum function device
