摘要
介绍了ＳＯＩＭＯＳＦＥＴ 二维数值模拟器的设计过程。耦合和非耦合相结合的迭代方法提高了收敛稳定性和计算效率。考虑了两种载流子的连续性方程及产生复合作用，精度较高。给出了利用该设计方法获得的ＳＯＩＭＯＳＦＥＴ二维体电势分布以及载流子浓度分布的三维输出图形。
The design of a two dimensional simulation has been developed for SOI MOSFET. In order to improve the calculation efficiency and stability of convergence, the combination of coupling and non coupling methods is introduced as well as the adoption of the dynamic factor of successive over relaxation. The distributions of voltage potential and carrier’s density have been achieved by means of the simulation results.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1999年第4期377-381,共5页
Research & Progress of SSE
基金
国家自然科学基金资助项目!(69876007)
