摘要
砷化镓化合物半导体是目前研究最深入、应用最广泛的化合物半导体材料。基于自身材料和生产工艺的不同,砷化镓芯片生产项目在污染源及防治措施方面与硅半导体有很大区别。为有效控制砷化镓芯片生产项目的环境影响,有必要对砷化镓芯片生产项目的污染源及防治措施进行研究。本文首先对污染因子及相关环境标准进行筛选,其次根据生产工艺分析了污染源的分布情况,进而阐述了污染物的治理措施,并进行了技术可行性分析。
Recently,gallium arsenide semiconductor becomes the most deeply researched and most widely used compound semiconductor material.Because of the differences on material and manufacture techniques,the pollution sources and treatment measures of GaAs chip manufacture are rather different from silicon semiconduc-tor.For the sake of environment,it is necessary to do research on pollution sources and treatment measures of GaAs chip manufacture.This paper firstly selects the polluting factors and related environmental standards.And then on the basis of manufacture techniques,it analyzes the distributing of pollution sources,puts forward the treatment measures and conducts the technical analysis.
