摘要
在超晶格样品（ＧａＡｓ）４／（ＡｌＡｓ）２的一级共振拉曼光谱的界面模的观察中，四个界面模在ＸＸ和ＸＹ两种偏振态中均能被观察到，这与传统的选择定则相矛盾。这是因为传统的理论假设电子波函数是完全限制在势阱当中，而在超薄系统中例如在ＧａＡｓ势阱中的电子波函数会穿透到ＡｌＡｓ势垒中，从而得到新的结果。这表明传统的理论在被应用到超薄系统或超小系统时需要进行一定的修正。
All four interface(IF) modes were observed in both (XX) and (XY) geometries in an ultra thin (GaAs) 4/(AlAs) 2 superlattice. This result, contrary to the prediction of conventional theories, has been interpreted as a consequence of the deep penetration of the electron wavefunction in the GaAs wells into the AlAs barriers, as weel as the lack of definite parity of the electron wavefunction. It indicate that conventional theory applicable to thicker systems has to be modified and/or further developed before it can apply to ultra thin systems and perhaps also ultra small systems.
出处
《光散射学报》
1999年第2期107-109,共3页
The Journal of Light Scattering
关键词
超薄超晶格
拉曼选择定则
界面模
砷化镓
ultra thin superlattices
Raman selection rules
interface modes
