摘要
我们开发了一个高纯Ｇａ１－ ｘＡｌｘＡｓ的室温折射率模型，适用于直接禁带以上和以下部分，并在禁带处连续．对与１．２ 和１．８ｅＶ 之间的能量的光子，模型与实验符合得很好．
We have developed a refractive index model of high purity Ga 1-x Al\- x As at room temperature,which is valid both below and above the direct band edge,and continuous at the direct band edge.The model is in good agreement with the experimental data for photon energies between 1 2 and 1 8eV.It can be extended to other semiconductor materials such as GaInAsP.
基金
国家自然科学基金
