摘要
利用自行研制的超高真空激活系统与表面分析系统,通过X射线光电子能谱(XPS)分析确定了采用的GaN(0001)化学清洗配方的有效性,并通过激活结果验证了达到原子级清洁表面所采用的加热清洁工艺的正确性。结合激活过程中的光电流变化曲线,确定了高温Cs单独激活与后续Cs/O交替激活相结合的工艺,成功制备了表面达到负电子亲和势(NEA)的GaN光电阴极。激活结束后,用光纤光源照射,测得光谱响应。通过计算得到量子效率曲线,验证了整套制备工艺的正确性。通过一系列实验,确立了一套制备NEA GaN光电阴极的工艺流程。
By making use of the self-developed ultrahigh vacuum activation system and surface analysis system, the validity of GaN （0001） chemical cleaning formula is confirmed by X-ray photoelectron spectroscopy （XPS） analysis. The heating cleaning technique to clean atom surface is proved to be correct by activated result. The activation technique combining Cs single activation with follow-up Cs/0 alternative activation is established by integrating light current changing curve in the activation process. GaN photocathode whose surface achieves negative electron affinity （NEA） is prepared successfully. After the activation, the spectral response is measured by the illumination of optical fiber. The whole preparation technique is proved to be correct true according to quantum efficiency curve obtained by calculation. The technique process of preparing NEA GaN photocathode is established through a series of experments.
出处
《光学学报》
EI
CAS
CSCD
北大核心
2011年第2期208-212,共5页
Acta Optica Sinica
基金
国家自然科学基金(60871012
60701013)资助课题
关键词
光电子学
制备工艺
铯氧激活
GAN光电阴极
量子效率
optoelectronics
preparation technique
（Cs,O） activation
GaN photocathode
quantum efficiency
