摘要
主要研究了减压法制备 Ｔ Ｉ Ｏ２ 薄膜过程中氧气及水的变化对薄膜沉积率的影响； 对 Ｔ Ｉ Ｏ２ 薄膜生长反应动力学进行了研究。为制备优制 Ｔ Ｉ Ｏ２ 薄膜奠定了基础。
In this paper,TiO2 thin film prepared by LPCVD and the effect of O2 and H2O pressure change on the film deposited rate were studied,meanwhile TiO2 thin film prepared in reaction kinetics was discussed.The theoretical basis for preparing quality TiO2 thin film is established.
出处
《真空与低温》
1999年第3期167-170,共4页
Vacuum and Cryogenics
