期刊文献+

3~5GHz超宽带并联负反馈低噪声放大器的设计 被引量:6

Design of Low Noise Amplifier with Shunt Feedback for 3-5 GHz UWB Receiver
原文传递
导出
摘要 设计了一种用于3~5 GHz MB-OFDM超宽带接收机射频前端的CMOS低噪声放大器(LNA)。分析了RC电阻反馈式低噪声放大器的结构,针对其存在的噪声大、增益低等问题,提出一种改进电路结构;增加了一个源极电感,以克服上述电路的不足。采用TSMC 0.18μm RFCMOS工艺,进行设计和仿真。仿真结果表明:改进结构在保证良好的输入输出匹配和较好线性度的前提下,提高了电路的噪声性能,在整个频带范围内,噪声系数小于1.9 dB;同时,增益也达到11 dB左右。 A CMOS low noise amplifier(LNA) with shunt feedback for RF front-end of 3-5 GHz MB-OFDM ultra wideband(UWB) receiver was designed.In order to get over deficiencies,such as large noise figure and low gain,in LNA with RC resistor feedback topology,an improved LNA architecture with an additional source inductor was proposed.The LNA circuit was designed and simulated based on TSMC's 0.18 μm standard RF CMOS process.Simulation results showed that the proposed structure improved noise performance of the circuit,which had a noise figure less than 1.9 dB and a power gain of about 11 dB.
出处 《微电子学》 CAS CSCD 北大核心 2011年第1期10-14,共5页 Microelectronics
关键词 超宽带 低噪声放大器 CMOS 并联反馈 UWB LNA CMOS Shunt feedback
  • 相关文献

参考文献10

  • 1WANG R-L, LIN M-C, YANG C-F, et al. A 1 V 3. 1- 10. 6 GHz full-band cascoded UWB LNA with resistive feedback [C] // IEEE Conf Elec Dev and Sol Sta Circ. Tainan, Taiwan, China. 2007: 1021-1023.
  • 2HUANG L, FENG L-S, LIN F-J. A 0. 18 μm CMOS 3- 5 GHz switched gain low noise amplifier for UWB system [C]//IEEE Int Symp Radio Frequency Integration Technology. Singapore. 2009 : 162-165.
  • 3YANG C-L, HSIEH W L, CHIANG Y C. A fully integrated and high linearity UWB LNA implemented with current-reused technique and using single-biasing voltage [C] // Europ Conf Wireless Technologies. Munich, Germany. 2007: 94-97.
  • 4SANSEN W M C. Analog design essentials [M]. New York: Springer, 2006.
  • 5LIN Y-S, CHEN C-Z, YANG H-Y, et al. Analysis and design of a CMOS UWB LNA with dual-RLC- branch wideband input matching network [J]. IEEE Trans Microwave Theory and Techniques, 2010, 58 (2) : 287-296.
  • 6LEE T H. The design of CMOS radio-frequency integrated circuits [M]. 2nd Ed. Cambridge, UK: Cambridge University Press, 2004 : 364-400.
  • 7DUAN J-H, HAN X-T, LI S. A wideband CMOS low noise amplifier for 3-5 GHz UWB systems [C]// MAPE'2009. Beijing, China. 2009:1002-1005.
  • 8SU J-F, FU Z-Q, YUAN H-Q, et al. An ultra-wide- band CMOS low noise amplifier for 3-5 GHz UWB wireless receivers [C] //7th Int Conf ASIC. Daejeon, Korea. 2007:407-410.
  • 9JUNG J, CHUNG K, YUN T, et al. Ultra wideband low noise amplifier using a cascade feedback topology [C] // Topic Meeting on Silicon Monolithic Integr Circ in RF Syst. San Diego, CA, USA. 2006: 202-205.
  • 10MAISURAH S, KIN W S, KUNG F, et al. 0. 18 ptm CMOS low noise amplifier for 3-5 GHz ultra wideband system [C] // Int Symp Integr Circ. Singapore. 2007: 100-103.

同被引文献34

  • 1张斌,汪柏康,张沁枫,孙文俊,秦战明.低功耗宽带低噪声放大器的设计[J].电声技术,2023,47(1):117-120. 被引量:4
  • 2朱兆君,贾宝富,罗正祥,羊恺.S波段小型化微带低噪声放大器的研制[J].电子器件,2006,29(2):405-408. 被引量:2
  • 3华明清,王志功,李智群.0.18-μm CMOS3.1-10.6GHz超宽带低噪声放大器设计[J].电路与系统学报,2007,12(1):44-47. 被引量:12
  • 4ZHANG H, CHEN G-C, LAI SM, et al. A high- gain differential CMOS LNA for 3.1-10.6 GHz ultra- wideband receivers [J]. IEICE Electronics Express, 2008, 5(15): 523-529.
  • 5HU JY, ZHU Y-L, WU H. An uhra-wideband resistive-feedback low-noise amplifier with noise cancellation in 0. 18 /m digital CMOS ]-C // Topic Meet Silicon Monolithic Integr Circ RF Syst. Orlando, Fir, USA. 2008: 218-221.
  • 6BLAAKMEER S C, KLUMPERINK E A M, LEENAERTS D M W, et al. Wideband Balun LNA with simultaneous output balancing, noise-canceling and distortion-canceling [J]. IEEE J Sol Sta Circ, 2008, 43(6): 1341-1350.
  • 7BLAAKMEER S C, KLUMPERINK E A M, LEENAERTS D M W, et al. A wideband noise canceling CMOS LNA exploiting a transformer [-C // IEEE RFIC Symp. San Francisco, CA, USA. 2006 137-140.
  • 8HUNG W-H, LIN K-T, Hsieh JY, GHz broadband CMOS low-noise et al. A 2-6 amplifier with current reuse topology utilizing a noise-shaping technique [C2 // IEEE Int Syrup Cire Syst. Rio de Janeiro, Brazil. 2011: 1291-1294.
  • 9PARK B,LEE K,CHOI S,et al.A 3.1-10.6 GHz RF receiver front-end in 0.18 ~m CMOS for uhra-wideband applications[J].IEEE MTY-S International Microwave Symposium digest.IEEE MTr-S International Microwave Symposium, 2010 : 1616-1619.
  • 10MIYAKE H, KITAZAWA S, ISHIZAKI T, et al.A miniaturized monolithic dual band filter using ceramic lamination technique for dual mode portable telephones[J].Journal of Bacteriology, 1997,2(3) : 1333-44.

引证文献6

二级引证文献18

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部