Effective Surface Exfoliation of 4H-SiC Induced by He＋ and O＋ Coimplantation
Effective Surface Exfoliation of 4H-SiC Induced by He＋ and O＋ Coimplantation
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1王卓,高玉杰,李梦凯,朱飞,张大成,刘昌龙.He and H sequential implantation induced surface blistering and the exfoliation of Si covered with an oxide layer[J].Chinese Physics C,2013,37(1):70-75.
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2Wei-zhong WANG,Ji LIANG,Yong RUAN,Wei PANG,Zheng YOU.Design and fabrication of an surface acoustic wave resonator based on AlN/4H-SiC material for harsh environments[J].Journal of Zhejiang University-Science A(Applied Physics & Engineering),2017,18(1):67-74. 被引量：1
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3时惠英,张彬,蒋百灵,张永宏,陈梓山.真空退火处理对掺Cr类石墨碳膜力学和摩擦学性能的影响[J].材料热处理学报,2009,30(6):135-139. 被引量：1
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4顾兴中,易红,倪中华,王跃轩.冠状动脉支架的设计与加工工艺[J].东南大学学报（自然科学版）,2005,35(6):898-902. 被引量：4
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5邵红红,徐涛,王晓静,邓进俊.磁控溅射硅钼薄膜的抗氧化性能研究[J].功能材料,2012,43(15):2095-2097. 被引量：5
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6Xing-Chao Shentu,Ya-Nan Zhu,Ying-Hui Gao,Su-Juan Zhao,Ye-Lei Tang.Electron microscopic investigation of anterior lens capsule in an individual with true exfoliation[J].International Journal of Ophthalmology(English edition),2013,6(4):553-556. 被引量：2
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7丁子成,李淑娟,李梓,崔丹.SiC单晶刻划过程的脆塑性转变特征研究[J].人工晶体学报,2016,45(11):2614-2625. 被引量：3
