FTIR Investigation of GaN Irradiated by Highly-charged Ions
FTIR Investigation of GaN Irradiated by Highly-charged Ions
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1Zhang Liqing Zhang Chonghong Li Bingsheng Zhou Lihong Yang Yitao Sun Youmei.PL Characterization of GaN Irradiated by Highly-charged Ions[J].近代物理研究所和兰州重离子加速器实验室年报:英文版,2007(1):71-71.
-
2Zhang Chonghong Han luhui Li Bingsheng Yang Yitao Jia Xiuj unand Xu Chaoliang.Highly-charged Ions Irradiation Induced Surface Damage of 6H-SiC[J].近代物理研究所和兰州重离子加速器实验室年报:英文版,2009(1):99-100.
-
3Chuai Xiaoya,Ma Xinwen,Wen Weiqiang,Huang Zhongkui,Wang Hanbing.4-7 Isotope Shift in the Dielectronic Recombination of Highly-charged Ions[J].IMP & HIRFL Annual Report,2015(1):201-201.
-
4SONG Yin,ZHANG ChongHong,HE DeYan,ZHANG LiQing,GOU Jie,YANG YiTao,LI JianJian.Annealing effects on the photoluminescence of Pb-ion irradiated He-doped sapphire[J].Science China(Physics,Mechanics & Astronomy),2012,55(10):1803-1807.
-
5彭海波,王铁山,韩运成,丁大杰,徐鹤,程锐,赵永涛,王瑜玉.高电荷态离子与Si(110)晶面碰撞的沟道效应研究[J].物理学报,2008,57(4):2161-2164. 被引量:1
-
6王晓方,沈百飞,徐至展.在激光等离子体中产生高电荷态离子的新途径[J].光学学报,1994,14(8):815-818.
-
7Wang Wei Yang Zhihu Song Zhangyong Xu Qiumei Cai Xiaohong.Visible Light Emission from Interaction of 20Neq+ Ions with Solid Surface of Al[J].近代物理研究所和兰州重离子加速器实验室年报:英文版,2009(1):213-213.
-
8激光物理[J].中国光学,1995(3):16-18.
-
9Liu Chunbao Wang Zhiguang Zang Hang Wei Kongfang Yao Cunfeng.PL Property of C-doped a-SiO2 after 950 MeV Pb Ion Irradiation[J].近代物理研究所和兰州重离子加速器实验室年报:英文版,2007(1):66-66.
-
10Rajabboy T, Khaydarov,Avaz Kholboev,Holida B. Beisinbaeva,Mirkomil M. Sabitov,Abdelaziz Sid,Golibjon R. Berdiyorov,Furkat Tojinazarov.Effect of Interaction Angle of Laser Radiation on the Characteristics of Laser-Produced Plasma Ions[J].材料科学与工程(中英文A版),2013,3(3):175-181.