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Photoluminescence of Ion Irradiated and Annealed Sapphire

Photoluminescence of Ion Irradiated and Annealed Sapphire
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摘要 Single crystal sapphire (Al2O3) samples were irradiated at 320 K by 208pb27+ ions with energy of 1.1 MeV/u to the fluences ranging from 1×1012 to 5×1014 ions/cm2 and annealed at 600, 900 and 1 100 K temperature. The modification of structure and optical properties induced by ion irradiation were analyzed by using PL and FTIR spectra. The PL measurements showed that absorption peaks located at 375, 390, 413, 450 and 516 nm appeared in irradiated samples (Fig. 1), the PL intensities of irradiated Single crystal sapphire (Al2O3) samples were irradiated at 320 K by 208pb27+ ions with energy of 1.1 MeV/u to the fluences ranging from 1×1012 to 5×1014 ions/cm2 and annealed at 600, 900 and 1 100 K temperature. The modification of structure and optical properties induced by ion irradiation were analyzed by using PL and FTIR spectra. The PL measurements showed that absorption peaks located at 375, 390, 413,
出处 《近代物理研究所和兰州重离子加速器实验室年报:英文版》 2005年第1期65-65,共1页 IMP & HIRFL Annual Report
基金 Supported by National Natural Science Foundation of China and Natural Science Foundation of Gansu
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