摘要
Crystalline SiO2 (c-SiO2) samples were implanted at room temperature (RT) with 120 keV C-ions and the selected implantation doses were 2.0×1017, 5.0×1017, 8. 6×1017 and 1. 2×1017 C/cm2. These samples were annealed in vacuum under 500, 700, 900 and 1 100℃, respectively. The modification of the samples was investigated at RT by using a Spectrum GX IR spectroscopy.
Crystalline SiO2 （c-SiO2） samples were implanted at room temperature （RT） with 120 keV C-ions and the selected implantation doses were 2.0×1017, 5.0×1017, 8. 6×1017 and 1. 2×1017 C/cm2. These samples were annealed in vacuum under 500, 700, 900 and 1 100℃, respectively. The modification of the samples was investigated at RT by using a Spectrum GX IR spectroscopy.
基金
Supported by National Natural Science Foundation of China (10125522,10475102)
