摘要
化学机械抛光技术已成为超大规模集成电路制造中实现硅片全局平面化的实用技术和核心技术。CMP的最大问题之一是硅片材料去除的非均匀性,它是集成电路对硅片表面平坦化需求的一个重要指标。文章提出了硅片表面材料去除非均匀性计算公式,在CP-4实验用抛光机上进行了硅片化学机械抛光实验,并用美国ADE公司生产的WaferCheck-7200型非接触式电容厚度测量设备对单晶硅片的厚度进行高精度检测,经过计算,得出了不同抛光速度下硅片表面材料去除非均匀性的数据,为理解硅片CMP材料去除非均匀性形成机理,进一步揭示硅片CMP材料去除机理提供了理论依据。
Chemical mechanical polishing（CMP） has become an operative and key technology in production of super-large-scale-integration to achieve complete planarization.One of the key points of CMP is material removal un-uniformity of the silicon wafer;it is a key factor of planarization required in integrated circuit production.The formula of calculating eliminating un-uniformity of the silicon wafer was first proposed in this article,CMP experiment was taken out on a CP-4 laboratory polishing machine,and thickness of the silicon wafer was highly precisely measured with WaferCheck-7200 produced by ADE Corp,USA.Material removal un-uniformity at different polishing speed was calculated and theory evidence was provided for understanding the formation and further revealing the mechanism of material removal un-uniformity of silicon wafer CMP.
出处
《超硬材料工程》
CAS
2010年第5期1-4,共4页
Superhard Material Engineering
基金
国家自然科学基金重大项目资助(No.50390061)
河南省科技攻关计划重点项目(102102210405)
河南省教育厅自然科学研究计划项目(2009A460004)
河南科技学院科技创新基金项目资助
