摘要
采用溶胶凝胶法快速成膜工艺分别在Si(100),SiO2/Si,Pt/Ti/SiO2/Si不同基底上制备LaNiO3导电薄膜,并分别以LNO和Pt/Ti为基底制备PZT薄膜。通过XRD,AFM,EDS等测试手段对LNO导电薄膜的结构及组成进行表征,并通过XRD,介电性能的测试比较LNO/Si和Pt/Ti沉积PZT薄膜的性能。结果表明,在Si(100),Pt/Ti/SiO2/Si上制备的LaNiO3导电薄膜是赝立方结构,而在SiO2/Si衬底上是四方结构。在Si(100)上得到的LNO薄膜致密、平整,可以作为制备PZT薄膜的导电层。在LNO和Pt/Ti上制备的PZT薄膜均为钙钛矿结构,且PZT/LNO薄膜各衍射峰强度优于PZT/Pt/Ti;而介电性能方面,PZT/LNO较PZT/Pt/Ti稍差,100kHz时,PZT/LNO和PZT/Pt/Ti的介电常数和介电损耗分别为562,0.29;408,0.037。
By Sol-Gel method,conductive LaNiO3 thin films are prepared on Si（100）,SiO2/Si,and Pt/Ti substrates using rapid thermal annealing,then PZT ferroelectric thin films deposit on LNO/Si and Pt/Ti substrates.The microstructure of the thin films has been investigated by X-ray diffraction（XRD）.Surface morphologies are determined by Atomic Force Microscope（AFM）.Energy Dispersive Spectrometer（EDS） results can tell us the component message on different films.Properties of PZT thin films are determined by XRD and the curve of dielectric constant and dielectric loss.Experiment results show that LNO/Si（100） multilayer thin films can get tetragonal structure,while LNO thin films deposited on SiO2/Si and Pt/Ti/SiO2/Si,pseudomorphic cubic phase.AFM appears conductive electric thin films deposited on Si（100） have a smooth,dense,and crack-free surface morphology,So LNO/Si（100） thin films can be used as substrate to deposite PZT ferroelelctic thin film.PZT thin films can get perovskite structure on LNO and Pt/Ti,the intensity of X-ray peak of PZT/LNO are higher than that of LNO/Pt/Ti.The dielectric constant and the dielectric loss of PZT thin films deposited on Pt/Ti are lower than those of LNO.At 100 kHz,the dielectric constant and the dielectric loss of PZT on LNO and Pt/Ti are 562,0.29;408,0.037 respectively.
出处
《山东科技大学学报（自然科学版）》
CAS
2010年第6期94-97,共4页
Journal of Shandong University of Science and Technology(Natural Science)
基金
山东科技大学科学研究"春蕾计划"项目(06540040808)
