摘要
在不同的衬底温度下用射频溅射方法制备了氮化碳薄膜。系统地研究了氮化碳薄膜的电子结构和光学性质随温度的变化规律。用富里叶变换红外光谱（FTIR）和X光电子能谱（XPS）对其化学结构及成分进行了分析。用透射紫外－可见－近红外（UV）光谱对其光学性质进行了评价。结果表明：薄膜中最大氮原子浓度为0．4。芯能级C1s和N1s的结合能产生了4.41～0.3eV的能移。能移的大小与衬底温度密切相关，并且薄膜中的N原子浓度和芯能级结合能随衬底温度增加而减少，表明增加衬底温度不利于氯化碳薄膜的形成。UV谱表明氯化碳膜在近红外区有一个好的透明性。但在2720nm附近存在有一明税的吸收峰。当衬底温度高于400℃时，该吸收峰消失。
Carbon nitride thin films have been deposited by radio frequency sputtering at different substrate temperature. The electron structure and optical properties of the carbon nitride thin films have been systematically studied as a function of the substrate temperatur. The chemical structure and composition of the films were char-acterind by Fourier transform infrared spectroscopy (FTIR~) and X-ray photoelectron spectroscopy (XPS). The optical properties of the films wer evaluated using transmission ultraviolet - visible - near inflared (UV) spectroscopy .The maximum N atom concentration in the Films arrived at 0.4. The binding energy (BE) of core level Cls and Nls produceas a large shift in range of 4.41 ~0.3 eV depended on substrate temperature Ts. Both N atom concentration and shift of BE of core leve are decreased with Ts increasing. It illustrates that raising Ts is not a good way to form carbon nitride films. UV spectra shows that the films have a good transparency in near infrared region, but there is a sharp absorption peak around 2720nm. The peak disappears when Ts is higher than 400 ℃. These results may be meaning for infrared application as a protective optical coating.
关键词
超硬材料
氮化碳薄膜
射频溅射
电子结构
Ultrahard material
Carbon nitride thin film
Radio frequency sputtering
