摘要
ＰＹＺＴ铁电薄膜电容器的制备采用ｓｏｌ－ｇｅｌ方法，将约５００ｎｍ厚的ＰＹＺＴ薄膜沉积在Ｐｔ／Ｔｉ、Ｐｔ／ＳｉＯ２及Ｐｔ／ＲｕＯ２底电极上，基片为Ｓｉ（１１１）。详细分析研究了ＰＹＺＴ薄膜在不同底电极，不同快速热处理温度下的晶相结构及ＰＹＺＴ铁电薄膜电容器的小信号特性。研究发现，沉积在Ｐｔ／ＲｕＯ２底电极上的ＰＹＺＴ薄膜经８００℃快速热处理具有较接近理想外延ＰＹＺＴ薄膜结构，而且εｒ随着快速热处理温度升高而减小，在８００℃快速热处理条件下其εｒ约为１５０。
PYZT thin films (around
500 nm) are deposited on the Pt/Ti, Pt/SiO 2 and Pt/RuO 2 bottom electrodes on the Si (111)
substrates by Sol Gel processing The crystalline phase and microstructure of the PYZT thin
films deposited on different bottom electrodes and rapidly thermal annealed at different
temperatures are analyzed The weak signal characteristics of the capacitors of PYZT
ferroelectric thin films are investigated It is found that when the PYZT thin film deposited on
Pt/RuO 2 is rapidly thermal annealed at 800℃, an almost ideal microstructure of extended
PYZT can be acquired, of which, the ε r decreases with the increasing of the rapid
temperature ( ε r is about 150 when annealed at 800 ℃) (6 refs )
出处
《电子元件与材料》
CAS
CSCD
1999年第2期3-5,10,共4页
Electronic Components And Materials
基金
"863"计划新材料领域资助项目
关键词
铁电薄膜
溶胶-凝胶法
底电极
电容器
ferroelectric
thin films, sol gel processing, rapid thermal annealing, bottom electrodes
