摘要
根据探测器截止波长的变化，讨论和确定了ＨｇＣｄＴｅ材料组份的实际偏差量。从ＳＰＲＩＴＥ探测器截止波长的测量结果计算，对用布里奇曼、Ｔｅ溶剂和固态再结晶等三种体晶技术生长的长波ＨｇＣｄＴｅ材料，在１ｍｍ２的面积上，材料组份的偏差量均能优于±０．００１５ｍｏｌｅ，在１ｃｍ２的面积上，统计平均的组份偏差相应要增大约一个数量级。
The real composition deviation of HgCdTe material is discussed and determined. On the basis of measuring results of the cut off wavelength of SPRITE detector, the real composition deviation of HgCdTe wafers on area of 1mm 2, which is fabricated with Bridgman, Te solution and solid state recrystallization techniques, is less than ±0.0015mole, but the statistical composition deviation on HgCdTe wafers about 1cm 2 will increase by a factor of 10.
出处
《红外与激光工程》
EI
CSCD
1999年第2期40-43,共4页
Infrared and Laser Engineering
