Effect of Doping with Sulfur on the Optical Constant of the SiC Films Prepared by TEA-CO2 Laser
Effect of Doping with Sulfur on the Optical Constant of the SiC Films Prepared by TEA-CO2 Laser
出处
《材料科学与工程（中英文版）》
2010年第12期6-11,共6页
Journal of Materials Science and Engineering
参考文献13
-
1D. Metzger, K. Hesch, P. Hess, Process characterization and mechanism for laser-induced chemical vapor deposition of a-Si:H from Sill4, Appl. Phys. A 45 (1988) 345-353.
-
2R. Solanki, C.A. Moore, G.J. Collins, Laser-induced chemical vapor deposition, Solid State Technology 28 (1985) 220-227.
-
3I.P. Herman, Laser-assisted deposition of thin films from gas-phase and surface-adsorbed molecules, Chem. Rev. 89 (1989) 1323-1357.
-
4V. Drinek, J. Pola, Laser-induced chemical vapour deposition of silicon carbide, Ceramics-Silikaty 38 (1994) 37-43.
-
5E. Halary-Wagner, F. Wagner, P. Hoffman, Titanium dioxide thin-film deposition on polymer substrate by light induced chemical vapor deposition, J. Electrochemical Society 151 (2004) C571-C576.
-
6H. Zhang, A. Wie, S. Liu, W. Wang, D. Chen, L. zheng, K. Chen, The preparation of nanosized silicon by laser-induced chemical vapour deposition, Thin Solid Films 368 (2000) 315-318.
-
7E. Halary, G. Benvenuti, F. Wagner, P. Hoffman, Light induced chemical vapour deposition of titanium oxide thin films at room temperature, Appl. Surf. Sci. 154-155 (2000) 146-151.
-
8R. Dutta, P.K. Banerjee, S.S. Mitra, Optical and electrical properties of hydrogenated amorphous silicon carbide, Phys. Stat. Sol. B 113 (1982) 277-284.
-
9S. Krishnan, G.C.D. Couto, M.I. Chaudhry, S.V. Babu, Excimer laser-induced doping of crystalline silicon carbide films, J. Mater. Res. 10 (1995) 2723-2727.
-
10M. Scartete M., I.S. Butler, J.F. Harrod, Nitrogenation of silicon carbide layers deposited on silicon single-crystal wafers via pyrolysis of Poly(methylsilane), Chem. Mater. 7 (1995) 1214-1220.
-
1刘道广,郝跃,徐世六,李开成,李培咸,张晓菊,张金凤,郑雪峰,张静,刘嵘侃,刘伦才.基于干/湿法腐蚀的自对准SiGe HBT器件[J].Journal of Semiconductors,2005,26(1):102-105.
-
2刘启飞,汪斌,罗宁,万彩云,范明豪.SFCL—I型SF_6气体处理系统调试与安装中的若干问题[J].电气应用,2009,28(13):26-29. 被引量：1
-
3张力,卢昌华,江建国,郑雷.激光可视检漏仪中激光能量对灵敏度的影响[J].激光与红外,2010,40(3):246-248. 被引量：4
-
4卫冰.在磁控管增强的SF6等离子体中锗的干蚀刻[J].等离子体应用技术快报,1999(2):4-5.
-
5丁瑞雪,杨银堂,韩茹.Microtrenching effect of SiC ICP etching in SF_6/O_2 plasma[J].Journal of Semiconductors,2009,30(1):100-102. 被引量：5
-
6李光明.激光光声光谱检测技术在六氟化硫检漏工作中的应用[J].科技传播,2011,3(4):149-149. 被引量：2
-
7Cheng-yin Wu,Hong-yan Jiang,Zhi-feng Wu,Qi-huang Gong.Laser-induced Alignment and Coulomb Explosion of CO2[J].Chinese Journal of Chemical Physics,2009,22(6):571-576.
-
8刘乐.GIS安装检测的程序[J].高压电器,1992,28(1):51-52.
-
9林俊荣,林恭如.A CO_2 laser rapid-thermal-annealing SiO_x based metal-oxide-semiconductor light emitting diode[J].Chinese Optics Letters,2007,5(10):601-601.
-
10王景儒.电气设备内六氟化硫中的水分及其控制[J].黎明化工,1994(4):16-19. 被引量：1
