摘要
We experimentally find that the ZnO thin films deposited by dc-magnetron sputtering have different conduction types after annealing at high temperature in different ambient. Hall measurements show that ZnO films annealed at 1100℃ in N2 and in 02 ambient become n-type and p-type, respectiveIy. This is due to the generation of different intrinsic defects by annealing in different ambient. X-ray photoelectron spectroscopy and photolumineseence measurements indicate that zinc interstitial becomes a main defects after annealing at 1100℃ in N2 ambient, and these defects play an important role for n-type conductivity of ZnO. While the ZnO films annealed at 1100℃ in O2 ambient, the oxygen antisite contributes ZnO films to p-type.
We experimentally find that the ZnO thin films deposited by dc-magnetron sputtering have different conduction types after annealing at high temperature in different ambient. Hall measurements show that ZnO films annealed at 1100℃ in N2 and in 02 ambient become n-type and p-type, respectiveIy. This is due to the generation of different intrinsic defects by annealing in different ambient. X-ray photoelectron spectroscopy and photolumineseence measurements indicate that zinc interstitial becomes a main defects after annealing at 1100℃ in N2 ambient, and these defects play an important role for n-type conductivity of ZnO. While the ZnO films annealed at 1100℃ in O2 ambient, the oxygen antisite contributes ZnO films to p-type.
基金
Supported by the National Natural Science Foundation of China under Grant No 50532070, and the Knowledge Innovation Project of Chinese Academy of Sciences under Grant No KJCX3.5YW.W01.
