摘要
介绍了Fe3Si的一些基本特性及Fe3Si薄膜的几种主要制备方法,重点介绍了分子束外延法中不同类型衬底、温度对Fe3Si薄膜形成的影响,并且分析了各种制备方法中的一些重要参数对薄膜结构及性质的影响。随着Fe3Si薄膜制备工艺的不断完善,Fe3Si薄膜将会成为一种性能优秀的自旋电子器件。
Some basic characteristics of Fe3Si were reviewed and several preparation methods of Fe3Si films such as molecular beam epitaxy, pulsed laser deposition, ion beam synthesis and radio-frequency sputtering, especially molecular beam epitaxy were summarized. The influence of different types of substrate and temperature on the formation of Fe3Si films was analyzed. Some important parameter which affected the structure and performance of Fe3Si films were analyzed in every preparation methods. With the development of technology of film preparation, Fe3Si films will be a sort of perfect spinning electron device.
基金
贵州省自然科学基金（黔科合J字[2008]2002号）
贵州省科技厅国际合作项目（黔科合外G字（2009）700113）
贵阳市技局大学生创业科技项目（[2007]筑科计合同字第6-3号 第6-1号 [2009]筑科计合同字第13号 第8号）
贵州大学引进人才项目（贵大人基合字[2009]002号）
关键词
薄膜制备
Fe3Si薄膜
自旋电子器件
preparation of thin films
Fe3Si film
spinning electron device
