摘要
运用相平衡分析的方法，对（Ｇａ，Ｉｎ）Ａｓ半导体ＭＯＶＰＥ生长过程中源物质热分解后的气相物种分压进行了分析，得到了沉积物种的生成率随各生长参数的变化规律，同时对气相物种分压与半导体碳污染的关系也进行了分析。
The partial pressures of various gaseous species after the precursors decompose were calculated. The regulation of generation rate of each deposition species changed with each growth parameters was obtained, and the relationship between the partial pressure of various gaseous species and carbon contamination of semiconductor was considered. In the above analysis, the method of phase equilibrium analysis was applied.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
1999年第3期209-213,共5页
Chinese Journal of Rare Metals
基金
国家"863"计划重点项目
关键词
半导体
热分解
碳污染
MOVPE
砷化镓
砷化铟
Ga,In)As alloy semiconductor, Phase equilibrium, Prolysis, Carbon contamination
