摘要
蓝宝石上外延生长ＺｎＯ薄膜在表面波和声光器件中有重要的应用．用微波电子回旋共振（ＥＣＲ）等离子体溅射法在蓝宝石（０１１２）晶面上外延生长了ＺｎＯ薄膜，膜无色透明，并且表面光滑，基片温度为３８０℃，为探索沉积工艺参数对薄膜结构的影响，用ＸＲＤ对不同基片温度和沉积速率生长的ＺｎＯ薄膜进行了研究．
Abstract Epitaxial growth of
ZnO film on sapphire substrate has important applications in surface acoustic wave and
acousto optical transducers.An epitaxial ZnO film has been grown on a (0112) sapphire
substrate using ECR plasma sputtering method at a substrate temperature of 380℃.The film is
colourless,transparent and surface smooth.In order to explore the relationship between the
deposition parameter and crystal structure of ZnO film,it have been studied that epitaxied
growth of ZnO film in different substrate temperatures and deposition rates by XRD method.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1999年第5期955-960,共6页
Acta Physica Sinica
基金
国家自然科学基金
