摘要
对于单模GaAlAs半导体激光器,使用一种简单的闪耀光栅外部弱反馈构型,迫使其工作在852.11nm波长处,得到了2.2GHz的频率连续调谐范围,获得的输出功率约为半导体激光器自由运转时的90%以上。
A new
type weak feedback from a blazing grating in Littrow configuration was usedto force a single mode
GaAlAs semiconductor laser to run at 852.11 nm. The frequency tuning range of 2.2 GHz around
852.11 nm and the output power higher than 90% of total power in the case of free running were
obtained.
出处
《光学学报》
EI
CAS
CSCD
北大核心
1999年第4期463-467,共5页
Acta Optica Sinica
基金
国家自然科学基金
山西省青年科学基金
关键词
半导体激光器
闪耀光栅
频率调谐
镓铝砷
single mode GaAlAs semiconductor laser, blazing grating, weak external
feedback, frequency tuning.