摘要
Effects of dopant properties on microstructures and the electrical characteristics of poly （3-hexylthiophene） （P3HT） films are studied by doping 0.1 wt% 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane （F4？TCNQ）, 6,6-phenyl-C61butyric acid methyl ester （PCBM） and N,N＇？Diphenyl-N,N＇-（m-tolyl）-benzidine （TPD） into P3HT, respectively. The introductions of various dopants in small quantities increase the field-effect mobility and the I on/Ioff ratio of P3HT thin-film transistors. However, each of dopants shows various effects on the crystalline order and the molecular orientation of P3HT films and the performance of P3HT thin-film transistors. These can be attributed to the various size, shape and energy-level properties of the dopants.
Effects of dopant properties on microstructures and the electrical characteristics of poly （3-hexylthiophene） （P3HT） films are studied by doping 0.1 wt% 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane （F4？TCNQ）, 6,6-phenyl-C61butyric acid methyl ester （PCBM） and N,N＇？Diphenyl-N,N＇-（m-tolyl）-benzidine （TPD） into P3HT, respectively. The introductions of various dopants in small quantities increase the field-effect mobility and the I on/Ioff ratio of P3HT thin-film transistors. However, each of dopants shows various effects on the crystalline order and the molecular orientation of P3HT films and the performance of P3HT thin-film transistors. These can be attributed to the various size, shape and energy-level properties of the dopants.
