摘要
本文首先讨论了GaAsFET对三值信号的处理过程，对二值GaAs电路的输出级等效电路与基于已提出的电路结构[4，6]的多值GaAs电路的输出级的等效电路进行了比较，并分析了该多值GaAs电路结构的缺陷及其产生缺陷的根源，在此基础上，提出了一种新的多值GaAs逻辑输出级的电路结构。经过PSPICE5．0程序的模拟表明：基于本文提出的电路结构的三值GaAs电路与相应的二值GaAs电路有相近的瞬态特性。
In this paper, the procedure of ternary signal processing based on GaAs FET is discussed. After comparing the equivalent circuit at the output level of binary GaAs circuits with that of mu1tiple-valued counterparts presented by reference l4,6], the defects and their causing reasons of the multiple-valued GaAs circuit structure are analyzed. Then a new output level circuit structure of ternary GaAs' is presented. Simulation results using PSPlCE5.o program show that the transient characteristics of ternary GaAs circuits presented here are similar to that of binary's.
出处
《电路与系统学报》
CSCD
1999年第2期60-63,共4页
Journal of Circuits and Systems
