摘要
一、引言 随着大规模集成电路和超大规模集成电路技术的发展,MOS器件的尺寸日益缩小,它的性能不能再用一个简单的一维分析公式来我达。为了精确地确定小尺寸MOS器件的性能及保证设计工作的正确性,必须研究二维,三维情形。差分方法的二维MOS器件模拟。
A Program for two-dimensional numerical analysis of MOSFET by Finite Element Method is Presented in this Paper. The Galrkin variational forms of semiconductor basic equations are derived; Poisson's equation and current continuity equation are solved by Gummel method; in Particular, an adaptive. Program module refining finite element triangulation is developped, this program module is used to obtain an appropriate mesh according to operating information.
出处
《工程数学学报》
CSCD
1989年第2期76-83,共8页
Chinese Journal of Engineering Mathematics
