期刊文献+

B位非化学计量比对0.6BCN-0.4BZN陶瓷性能的影响 被引量:2

Effect of B-site cation nonstoichiometric ratio on the properties of 0.6BCN-0.4BZN ceramics
在线阅读 下载PDF
导出
摘要 采用传统固相反应法,制备了Ba(Co0.6Zn0.4)1/3Nb2/3O3(0.6BCN-0.4BZN)微波介质陶瓷。系统研究了Ba(Co0.6Zn0.4)(1/3+x)Nb2/3O3陶瓷中B位(Zn,Co)离子的非化学计量比(x=-0.015,-0.009,-0.003,0,0.003,0.009,0.015)对该微波介质陶瓷性能的影响。结果表明:少量的B位离子缺量,可以促进烧结的致密化。x为-0.009时所制陶瓷密度最大,达到理论密度的99%以上。在1400℃下烧结20h,可以获得εr=35.35,Q.f=40787GHz(f=5.180GHz),τf=-3×10-6/℃的0.6BCN-0.4BZN陶瓷。 Ba(Co0.6Zn0.4)(1/3)Nb2/3O3(0.6BCN-0.4BZN) microwave dielectric ceramics were prepared by using the conventional solid-state method.The effects of B-site(Co,Zn) cation nonstoichometric ratio(x=-0.015,-0.009,-0.003,0,0.003,0.009,0.015) on the microwave dielectric properties of prepared Ba(Co0.6Zn0.4)(1/3+x)Nb2/3O3 ceramics were investigated.The results indicate that slight B site cation deficiency can increase the densification degree of the 0.6BCN-0.4BZN microwave dielectric ceramics.Meanwhile,the density with a maximum(above 99% of theoretical density) can be achieved while the x value is-0.009.Especially,when the ceramics are sintered at 1 400 ℃ for 20 h,the relative permittivity and the Q.f value measured at 5.180 GHz are 35.35 and 40 787 GHz,respectively.The temperature coefficient of resonant frequency(τf) shows a negative value of-3×10-6 /℃.
出处 《电子元件与材料》 CAS CSCD 北大核心 2010年第9期44-47,共4页 Electronic Components And Materials
基金 国防基础科研基金资助项目
关键词 微波介质陶瓷 Ba(Co0.6Zn0.4)1/3Nb2/3O3 非化学计量比 密度 microwave dielectric ceramic Ba(Co0.6Zn0.4)1/3Nb2/3O3 nonstoichiometric ratio density
  • 相关文献

参考文献8

  • 1KAWASHIMA S,NISHIDA M,UEDA I,et al.Ba(Zn1/3Ta2/3)O3 ceramics with low dielectric loss at microwave frequencies[J].J Am Ceram Soc,1983,66:421.
  • 2BARBER D J,MOULDING K M,ZHOU J.Structural order in Ba(Zn1/3Ta2/3)O3,Ba(Zn1/3Nb2/3)O3 and Ba(Mg1/3Ta2/3)O3 microwave dielectric ceramics[J].J Mater Sci,1997,32:1531-1544.
  • 3YUE Z X,ZHAO F,ZHANG Y C,et al.Microwave dielectric properties of BaE(Zn1-xCoxNb]O3 ceramics[J].Mater Lett,2004,58:1830-1834.
  • 4PAIK J H,KIM I T,BYLIN J D,et al.The effect of Mg deficiency on the microwave dielectric properties of Ba(Mg1/3Nb2/3)O3[J].J Mater Sci Lett,1998,17:1777-1780.
  • 5KUZHICHALIL P,SURENDRAN T,SEBASTIAN P M,et al.Effect of onstoichiometry on the structure and microwave dielectric properties of Ba(Mg0.33Ta0.67)O3[J].Chem Mater,2005,17:142-151.
  • 6SEBASTIAN M T,SURENDRAN K P.Tailoring the microwave dielectric properties of Ba(Mg1/3Ta2/3)O3 ceramics[J].J Eur Ceram Soc,2006,26:1791-1799.
  • 7KIM I T,OH T S,KIM Y H.Lattice distortion of Ba(Zn1/3Ta2/3)O3 withordering of B-site cation[J].J Mater Sci Lett,1993,12:182-183.
  • 8田中青,黄伟九,张春艳,余洪滔.调节Ba(B′_(1/3)B″_(2/3))O_3型微波介质陶瓷τ_f的方法[J].材料导报,2007,21(10):55-57. 被引量:1

二级参考文献1

同被引文献22

  • 1赵飞,岳振星,张迎春,桂治轮,李龙土.Ba(Zn_(0.5)W_(0.5))O_3掺杂对Ba[(Zn_(0.2)Co_(0.8))_(0.33)Nb_(0.66)]O_3微波介质陶瓷的影响[J].黑龙江科技学院学报,2005,15(2):72-74. 被引量:1
  • 2王浩,田中青,刘涛.复合钙钛矿陶瓷的结构与微波介电性能[J].陶瓷学报,2005,26(4):225-230. 被引量:7
  • 3REANEYIM,IQBALY.Order-disorder behavior in 0.9Ba([Zn0.6Co0.4]1/3Nb2/3)O3-0.1Ba(Ga0.5Ta0.5)O3microwave dielectric resonators[J].J Eur Ceram Soc,2005,25:1183-1189.
  • 4KIM M H,JEONG Y H,NAHM S,et al.Effect of B2O3 and CuOadditives on the sintering temperature and microwave dielectric propertiesof Ba(Zn1/3Nb2/3)O3ceramics[J].J Eur Ceram Soc,2006,26:2139-2142.
  • 5ENDO K,FUJIMOTO K,MURAKAWA K.Dielectric properties ofceramics in Ba(Co1/3Nb2/3)O3-Ba(Zn1/3Nb2/3)O3 solid solutions[J].AmCeram Soc,1987,70(9):215-218.
  • 6AHN C W,JANG H J,NAHM S,et al.Effects of microstructure on themicrowave dielectric properties of Ba(Co1/3Nb2/3)O3and(1–x)Ba(Co1/3Nb2/3)O3-xBa(Zn1/3Nb2/3)O3[J].J Eur Ceram Soc,2003,23:2473-2478.
  • 7YUE Z X,ZHAO F,ZHANG Y C,et al.Microwave dielectric propertiesof Ba[(Zn1 xCox)1/3Nb2/3]O3ceramics[J].Mater Lett,2004,58:1830-1834.
  • 8BIAN J J,SONG G X,YAN K.Structure and microwave dielectricproperties of Ba1+x[(Co0.7Zn0.3)1/3Nb2/3]O3(0.015≤x≤0.015)[J].J EurCeram Soc,2007,27:2817-2821.
  • 9VARMA M R,SEBASTIAN M T.Effect of dopants on microwavedielectric properties of Ba(Zn1/3Nb2/3)O3 ceramics[J].J Eur Ceram Soc,2007,27:2827-2833.
  • 10You C C,Huang C L,Wei C C,et al.hnproved high-Q dielectric resonator sintered at low firing temperature [J].Japanese Journal of Applied Physics,1995,34(4A):1911.

引证文献2

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部