摘要
提出了一种基于MicroSim公司的通用电子电路仿真软件Pspice上的新颖的非线性器件的仿真方法，并以非线性电容为例具体加以实现该模型是一个通用子电路模型，并且可以应用于任何电路仿真及电力半导体器件建模中由于在该模型的建立中采取了非线性函数的曲线拟合方法，使得原先在Pspice中无法实现的非线性器件可以通过易于实现的受控源来模拟拟合多项式函数．本文以见公司的功率电子器件IGBT手册所给出的栅漏电容特性与仿真结果加以对比，证明了本方法的准确性及实用性．在实际应用中，该模型结合其它的非线性器件模型成功地构造了功率电子器件IGBT．同时，该思想也可以应用于大部分仿真软件中的非线性元件建模中．
A novel modeling way for nonlinear devices based on the MicroSim Corporatrion's general electronic andcircuital simulation software-Pspice is proposed for and implemented on the nonlinear capacitance. This model is ageneral subcircuit model and can be used in any circuit simulating and for modeling of power devices. As the modeladoptS the curve-fitting way for the nonlinear function, it is eaSy to realize the simulation of nonlinear devices inPspice using the controlled-source, which simulates the curve-fitting polynomial function. The veracity and practicability of modeling way is proved by the result of comparing IR Corporation's IGBT gate-drain capacitancecharacteristic with the simulating curve. In actual application, the power device IGBT is simulated successfully through the simulating way of these nonlinear componentS. The ideal can be used to model the nonlinear component in others simulation software as well.
出处
《哈尔滨工业大学学报》
EI
CAS
CSCD
北大核心
1999年第3期44-46,共3页
Journal of Harbin Institute of Technology
