摘要
用中频反应磁控溅射技术制备了Al2O3:Ce3+的非晶薄膜。这些薄膜的光致发光峰是在370～395 nm之间,它来自于Ce3+离子的5d1激发态向基态4f1的两个劈裂能级的跃迁。发光强度依赖于薄膜的掺杂浓度,并分析了产生这种关系的原因。Al2O3:Ce3+非晶薄膜发光特性在平板显示等领域有着广泛潜在的应用前景。
Amorphous aluminum oxide thin films doped with cerium were deposited by the MF reactive magnetron sputtering process,where some Ce^3＋ ions were found.The photoluminescence emission from these films showed the peaks at around 370～395nm,which are resulting from the transition from 5d1 excitation state of Ce^3＋ ions to two splitted levels of 4f1 in normal state.The intensity of the peaks are strongly dependent on the cerium dopant concentrations in the films,and why the dependence comes out was analyzed.The luminescence property of the films is of significance to the panel display technique and has broad prospects.
出处
《真空》
CAS
北大核心
2010年第5期45-48,共4页
Vacuum
关键词
光致发光
AL2O3
非晶薄膜
磁控溅射
稀土元素
photoluminescence
Al2O3
amorphous thin films
magnetron sputtering
rare earth
