摘要
采用紧束缚的ｓｐ３ｓ模型描述体电子态，用散射理论的格林函数方法研究了Ｓｂ吸附在ＧａＡｓ（１１０）表面上的电子特性．计算结果表明：在－１２ｅＶ—＋２ｅＶ的能区内有９个表面态存在，对于这样的金属／半导体系统仍有带隙存在，其带隙宽度为０．４ｅＶ左右；体系的性质表现为半导体的性质。
Using the tight-binding method to describe the bulk electronic structure of GaAs. By applying the scattering theory method, the electronic properities of metal Sb adsorpted on GaAs(110) surface are presented. The results show that there are nine surface states in the range from -12 eV to +2eV and also show that the system of Sb/GaAs has the properities of semiconductors but not metals. Some properities of these surface states are discussed.
出处
《郑州大学学报（自然科学版）》
CAS
1999年第1期38-43,共6页
Journal of Zhengzhou University (Natural Science)
基金
河南省自然科学基金
关键词
吸附
表面态密度
电子套
锑
砷化镓
半导体
adsorption
density of state of surface
scattering theory
GaAs(110)
