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Off-state avalanche breakdown induced degradation in 20 V NLDMOS devices

Off-state avalanche breakdown induced degradation in 20 V NLDMOS devices
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摘要 Degradation behaviors of 20 V NLDMOS operated under off-state avalanche breakdown conditions are presented.A constant current pulse stressing test is applied to the device.Two different degradation mechanisms are identified by analysis of electrical data,technology computer-aided design（TCAD） simulations and charge pumping measurements.The first mechanism is attributed to positive oxide-trapped charges in the N-type drift region,and the second one is due to decreased electron mobility upon interface state formation in the drift region.Both of the mechanisms are enhanced with increasing avalanche breakdown current. Degradation behaviors of 20 V NLDMOS operated under off-state avalanche breakdown conditions are presented.A constant current pulse stressing test is applied to the device.Two different degradation mechanisms are identified by analysis of electrical data,technology computer-aided design（TCAD） simulations and charge pumping measurements.The first mechanism is attributed to positive oxide-trapped charges in the N-type drift region,and the second one is due to decreased electron mobility upon interface state formation in the drift region.Both of the mechanisms are enhanced with increasing avalanche breakdown current.
作者 张世锋 丁扣宝 韩雁 韩成功 胡佳贤 张斌
机构地区 Institute of Microelectronics & Photoelectronics
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第9期37-40,共4页 半导体学报（英文版）
基金 supported by the National Science & Technology Major Project of China(No.2009ZX01033-001-003)
关键词 NLDMOS avalanche breakdown DEGRADATION charge-pumping NLDMOS avalanche breakdown degradation charge-pumping
分类号 TN432 [电子电信—微电子学与固体电子学]
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参考文献9

  • 1Chen J F, Lee J R, Wu K M, et al. Off-state avalanche-breakdown-indueed on-resistance degradation in lateral DMOS transistors. IEEE Electron Devices Lett, 2007, 28(11): 1033.
  • 2Moens P, van den Bosch G. Characterization of total safe operation area of lateral DMOS transistors. IEEE Trans Device Mater Reliab, 2006, 6(3): 349.
  • 3Brisbin D, Lindorfer P, Chaparala P. Anomalous safe operating area and hot carrier degradation of NLDMOS devices. IEEE Trans Device Mater Reliab, 2006, 6(3): 364.
  • 4Moens P, van den Bosch G, de Keukeleire C, et al. Hot hole degradation effects in lateral nDMOS transistors. IEEE Trans Electron Devices, 2004, 51(10): 1704.
  • 5Wu K M, Chen J F, Su Y K, et al. Anomalous reduction of hotcarrier-induced on-resistance degradation in n-type DEMOS transistors. IEEE Trans Device Mater Reliab, 2006, 6(3): 371.
  • 6Marbell M N, Cherepko S V, Hwang J C M, et al. Effects of dummy gate on breakdown and degradation of LDMOSFETs. IEEE Trans Device Mater Reliab, 2008, 8(1): 193.
  • 7Moens P, van den Bosch G, Groeseneken G. Hot-carrier degradation phenomena in lateral and vertical DMOS transistors. IEEE Trans Electron Devices, 2004, 51(4): 623.
  • 8Chen J F, Lee J R, Wu K M, et al. Mechanism and improvement of on-resistance degradation induced by avalanche breakdown in lateral DMOS transistors. IEEE Trans Electron Devices, 2008, 55(8): 2259.
  • 9Moens P, van den Bosch G, Groeseneken G. Competing hot eartier degradation mechanisms in lateral N-type DMOS transistors. Reliability Physics Symposium Proceedings, 2003.
Journal of Semiconductors
2010年 第9期

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