Phonon-induced magnetoresistance oscillations in a high-mobility quantum well

Phonon-induced magnetoresistance oscillations in a high-mobility quantum well

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摘要 We examine the temperature dependence of acoustic-phonon-induced magnetoresistance oscillations in a high-mobility GaAs-based quantum well with conventional transverse and longitudinal phonon modes,using a model in which the temperature increase of the Landau level broadening or the single-particle scattering rate 1/τ;is attributed to the enhancement of electron-phonon scattering with rising temperature.The non-monotonic temperature behavior, showing an optimal temperature at which a given order of oscillation amplitude exhibits a maximum and the shift of the main resistance peak to higher magnetic field with rising temperature,is produced,in agreement with recent experimental findings. We examine the temperature dependence of acoustic-phonon-induced magnetoresistance oscillations in a high-mobility GaAs-based quantum well with conventional transverse and longitudinal phonon modes,using a model in which the temperature increase of the Landau level broadening or the single-particle scattering rate 1/τ_s is attributed to the enhancement of electron-phonon scattering with rising temperature.The non-monotonic temperature behavior, showing an optimal temperature at which a given order of oscillation amplitude exhibits a maximum and the shift of the main resistance peak to higher magnetic field with rising temperature,is produced,in agreement with recent experimental findings.

作者周其盛曹俊诚齐鸣雷啸霖

机构地区 State Key Laboratory of Functional Materials for Informatics Department of Physics

出处《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第9期1-4,共4页 半导体学报（英文版）

基金 supported by the National Basic Research Program of China(No.2007CB310402) the National Natural Science Foundation of China(No.60721004) the Major Projects(Nos.KGCX1-YW-24,KGCX2-YW-231) the Hundred Scholar Plan of the Chinese Academy of Sciences

关键词 two-dimensional electron gas phonon-induced magnetoresistance oscillations linear mobility optimal temperature two-dimensional electron gas phonon-induced magnetoresistance oscillations linear mobility optimal temperature

分类号 O471.1 [理学—半导体物理]

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1Zudov M A, Du R R, Simmons J A, et al. Shubikovde Haas-like oscillations in millimeterwave photoconductivity in a highmobility two-dimensional electron gas. Phys Rev B, 2001, 64: 201311(R).
2Ye P D, Engel W, Tsui D C, et al. Giant microware photoresistance of two-dimensional electron gas. Appl Phys Lett, 2001, 79:2193.
3Mani R G, Smet J H, von Kiltzing K, et al. Zero-resistance states induced by electromagnetic-wave excitation in GaAs/A1GaAs heterostructures. Nature (London), 2002, 420:646.
4Zudov M A, Du R R, Pfeiffer L N, et al. Evidence for a new dissipationless effect in 2D electronic transport. Phys Rev Lett, 2003, 90:046807.
5Yang C L, Zudov M A, Knuuttila T A, et al. Observation of microwave-induced zero-conductance state in Corbino rings of a two-dimensional electron system. Phys Rev Lett, 2003, 91: 096803.
6Dorozhkin S I. Giant magnetoresistance oscillations caused by cyclotron resonance harmonics. JETP Lett, 2003, 77:681.
7Mani R G, Smet J H, von klitzing K, et al. Demonstration of a 1/4-cycle phase shift in the radiation-induced oscillatory mgnetorsistanee in GaAs/AIGaAs devices. Phys Rev Lett, 2004, 92: 146801.
8Willett R L, Pfeiffer L N, West K W. Evidence for current-flow anomalies in the irradiated 2D electron system at small magnetic fields. Phys Rev Lett, 2004, 93:026804.
9Yang C L, Zhang J, Du R R, et al. Zener tunneling between Landau orbits in a high-mobility two-dimensional electron gas. Phys Rev Lett, 2002, 89:076801.
10Bykov A A, Zhang J Q, Vitkalov S, et al. Effect of dc and ac excitations on the longitudinal resistance of a two-dimensional electron gas in highly doped GaAs quantum wells. Phys Rev B, 2005, 72:245307.

1高政祥,王世光,戴远东.非局域电阻振荡上的LP振荡效应[J].低温物理学报,1996,18(2):109-115.
2Ida Hamidah.High Mobility and High N Concentration of GaNxAs1-x Thin Films Grown by MOCVD[J].材料科学与工程（中英文A版）,2011,1(2X):204-209.
3毛淑娟,朱正勇,王桂磊,朱慧珑,李俊峰,赵超.High-Mobility P-Type MOSFETs with Integrated Strained-Si_(0.73)Ge_(0.27) Channels and High-κ/Metal Gates[J].Chinese Physics Letters,2016,33(11):127-130.
4杨癸,涂必红,李国辉,赵宏伟,周世平.Radiation-induced resistance oscillation and instability in GaAS/AlGaAS heterostructure under transverse magnetic fields[J].Chinese Physics B,2008,17(6):2010-2017.
5佘彦超,罗婷婷,张蔚曦,冉茂武,王登龙.Steady-state linear optical properties and Kerr nonlinear optical response of a four-level quantum dot with phonon-assisted transition[J].Chinese Physics B,2016,25(1):589-594. 被引量：2
6邓洪祥,蒋晓东,向霞,孙凯,袁晓东,郑万国,高飞,祖小涛.General formula for phonon-assisted n-photon absorption in solids[J].Chinese Physics B,2010,19(10):573-583.
7R.A.Webb,S.Washburn,G.Present,杨锡震.无序金属中的Aharonov-Bohm效应[J].大学物理,1986,0(10):44-45.
8Andreas Eipper Reinhard Stransky.小粒子，大效果[J].现代塑料,2010(2):46-48.
9杨威,罗海辉,钱轩,姬扬.高迁移率GaAs/Al_(0.35)Ga_(0.65)As二维电子气的微波回旋共振研究[J].红外与毫米波学报,2010,29(2):87-90.
10昌峻,张雪强,臧超飞,丁克俭,何豫生,杨涛,戴远东.准一维介观铝超导线的电阻振荡[J].低温物理学报,2001,23(3):188-192.

Journal of Semiconductors

2010年第9期

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Phonon-induced magnetoresistance oscillations in a high-mobility quantum well

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