摘要
采用热丝ＣＶＤ设备与工艺，在直径为４１ｍｍ的单晶硅基体上，以丙酮为碳源，在高纯Ｈ２的作用下，成功地合成了（１１１）取向的高质量金刚石大膜。Ｘ射线、ＳＥＭ和拉曼光谱分析表明，所合成金刚石大膜的纯度高、厚度均匀、化学性能稳定，其结构和性能与天然金刚石的十分接近。
Large area (111) oriented diamond films of high quality have been synthesized triumphantly using gaseous acetone as carbon source and singlecrystal silicon wafer as substrate, diameter of which is 41 min, by the influence of high purity H2, using the hotfilament CVD unit and technique reported in the study. From the measurements, it is found that the quality of diamond films produced using the method has reached the resalts reported at home and abroad.
出处
《矿冶工程》
CAS
CSCD
北大核心
1999年第2期63-65,共3页
Mining and Metallurgical Engineering
关键词
金刚石薄膜
CVD
制备
薄膜
chemical vapour deposition
hotfilament CVD
diamond films
