摘要
采用电子回旋共振等离子体增强金属有机物化学气相沉积(ECR-PEMOCVD)方法,在镀铝玻璃衬底上沉积了GaN薄膜。RHEED和XRD分析显示,适当增加TMGa流量,薄膜呈现高度c轴择优取向特征;SEM表明,随着TMGa流量增加,薄膜表面逐渐平整致密;对Raman光谱中A1(TO)、E1(TO)两个禁戒模式及281.1cm-1附近宽峰出现的原因进行了探讨,并对E2(high)、A1(LO)模的低频移动进行了分析,分析认为E2(high)模低频移动是薄膜内应力和晶粒尺寸效应共同作用的结果,同时晶粒尺寸效应还导致了A1(LO)模的低频移动。
GaN films were deposited on Al films with corning 7101glass substrates by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system（ECR-PEMOCVD）.RHEED and XRD indicate that the GaN films deposited under higher TMGa flow rates have strong c-axis preferred orientation.SEM shows that the surface of the GaN films becomes smoother with the increase of TMGa flow rate.The origin of the three Raman peaks A1（TO）、E1（TO）and 281.1cm-1 appearing in the Raman spectroscopy is discussed.The down shift for the E1（high）mode may be due to the intrinsic stress and crystallite size effect,and the A1（LO）mode down shift may be also caused by crystallite size effect.
出处
《半导体光电》
CAS
CSCD
北大核心
2010年第4期557-562,共6页
Semiconductor Optoelectronics
基金
国家自然科学基金项目(60976006)
