摘要
本文研究了铌掺杂的ＰＬＺＴ驰豫铁电陶瓷在不同直流偏压及温度下的介电常数ε３３，平面机电耦合系数ｋｐ和等效横向压电常数ｄ３１。实验表明，铌掺杂的ＰＬＺＴ驰豫铁电陶瓷的ｄ３１值可由直流偏压控制及ｄ３１值的温度系数远小于ＰＭＮ－ＰＴ系陶瓷。室温下２ｍｏｌ％和３ｍｏｌ％的铌掺杂的ＰＬＺＴ１０／６５／３５驰豫铁电陶瓷在１０ＫＶ／ｃｍ的偏压下｜ｄ３１｜分别为２０５ｐＣ／Ｎ和１６０ｐＣ／Ｎ。根据公式ｄ３１＝２·Ｑ１２·Ｐ３·ε０·ε３３计算了不同偏压下的ｄ３１值。
The dielectric constant 33,electromechanical planar coupling factor kp and effective transverse piezoelectric coefficient d31 under direct current bias at different temperatures were investigated for niobium-doped PLZT relaxor ferroelectric ceramics.The experiments show that d31 of Nb-doped PLZT relaxor ferroelectric ceramics can be controlled by direct current bias and its temperature dependence is much less compared to that of PMN-PT ceramics.The values of |d31| under a bias of 10KV/cm for 2mol% and 3mol% Nb-doped PLZT 10/65/35 relaxor ferroelectric ceramics are 205pC/N and 160pC/N respectively at room temperature.d31 was calculated by equation d31=2Q12P3o33 and the results agree with the measured ones.
出处
《中国陶瓷》
CAS
CSCD
北大核心
1999年第3期9-12,共4页
China Ceramics
基金
广东省自然科学基金
关键词
压电效应
锆钛酸铅镧
弛豫铁电陶瓷
陶瓷
PLZT
direct current bias,piezoelectric effect,lanthanum-modified lead zirconate titanate
