摘要
目的：研究诱导型一氧化氮合酶在电离辐射导致的神经细胞凋亡中的作用。方法；以单剂量２．０Ｇｙγ射线照射出生后０ｄ的Ｗｉｓｔａｒ大鼠，用ＡＢＣ法检测照射后第０．５，１，２，４，６，８，１２，２４，４８小时大脑皮质内ｉＮＯＳ的表达。结果；照射组各时间点均有不同程度的ｉＮＯＳ表达，第６小时达峰值。各对照组未见ｉＮＯＳ表达。
To study the role of iNOS in ionizing radiation-induced apoptosis in the developing cerebral cortex. Methods: Wistar rats aged 0 day (PO) were irradiated with a single dose of 2.0Gy γ-ray. iNOS expression in the cerebral cortex was detected following ABC method at 0. 5, 1, 2, 4, 6, 8, 12, 24, 48 h after irradiation. Results: iNOS expression at diverse levels was detected in all irradiated groups and was maximum at 6h. The cerebral cortex of control rats had no iNOS expression. Conclusion: The neurotoxity of iNOS may be an important factor in ionizing radiation- induced apoptosis in the developing brain.
出处
《北京医科大学学报》
CSCD
1999年第2期145-146,176,共3页
Journal of Peking University(Health Sciences)
关键词
诱导型
一氧化氮合酶
电离辐射
大脑皮质
Inducible nitric oxide synthase Radiation, ionizing Cerebral cortex/radiogr apoptosis
