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Ion-induced kinetic electron emission from ~6LiF,~7LiF and MgF_2 thin films

Ion-induced kinetic electron emission from ~6LiF,~7LiF and MgF_2 thin films
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摘要 Secondary electron yields for Ar^+ impact on 6LiF, 7LiF and MgF2 thin films grown on aluminum substrates are measured each as a function of target temperature and projectile energy. Remarkably different behaviours of the electron yields for LiF and MgF2 films are observed in a temperature range from 25 ℃ to 300 ℃. The electron yield of LiF is found to sharply increase with target temperature and to be saturated at about 175 ℃. But the target temperature has no effect on the electron yield of MgF2. It is also found that for the ion energies greater than 4 keV, the electron yield of 6LiF is consistently high as compared with that of 7LiF that may be due to the enhanced contribution of recoiling 6Li atoms to the secondary electron generation. A comparison between the electron yields of MgF2 and LiF reveales that above a certain ion energy the electron yield of MgF2 is considerably low as compared with that of LiF. We suggest that the short inelastic mean free path of electrons in MgF2 can be one of the reasons for its low electron yield. Secondary electron yields for Ar^+ impact on 6LiF, 7LiF and MgF2 thin films grown on aluminum substrates are measured each as a function of target temperature and projectile energy. Remarkably different behaviours of the electron yields for LiF and MgF2 films are observed in a temperature range from 25 ℃ to 300 ℃. The electron yield of LiF is found to sharply increase with target temperature and to be saturated at about 175 ℃. But the target temperature has no effect on the electron yield of MgF2. It is also found that for the ion energies greater than 4 keV, the electron yield of 6LiF is consistently high as compared with that of 7LiF that may be due to the enhanced contribution of recoiling 6Li atoms to the secondary electron generation. A comparison between the electron yields of MgF2 and LiF reveales that above a certain ion energy the electron yield of MgF2 is considerably low as compared with that of LiF. We suggest that the short inelastic mean free path of electrons in MgF2 can be one of the reasons for its low electron yield.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第8期344-349,共6页 中国物理B(英文版)
基金 Project partially supported by the Higher Education Commission of Pakistan through indigenous PhD program
关键词 ion-induced electron emission alkali halides electronic stopping electron mean free path ion-induced electron emission, alkali halides, electronic stopping, electron mean free path
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