摘要
本文探讨了用多个幅度台阶（包括0和1）对阵列进行稀疏的多台阶稀疏技术，与统计密度锥削稀疏技术（幅度仅用0和1）相比，该技术能明显改善稀疏阵天线的副瓣电平，文中用概率方法和最佳一致逼近概念进行了详细阐述，并给出了峰值副瓣电平低于给定值的概率．
The multistep sparse technology (MST) is described in this paper. Using multistep amplitudes (including 0 and 1) the prescribed array can be thinned. Compared with the statistic density tappering technology (only using 0 and 1 ),MST can improve the sidelobe level of the sparse array obviously. Here, with the help of the Probability Theory and the Optimum and Consistent Aproaching Method, MST is presented in details and the probability of the peak sidelobe level less than the given value is given.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1999年第3期79-80,78,共3页
Acta Electronica Sinica
关键词
稀疏阵
多台阶稀疏技术
峰值副瓣电平
天线
Sparse array, Multistep sparse technology, Sparse parameter, Peak sidelobe level, Average value, Variance
