摘要
采用一种修正的晶体场理论方法研究了３ｄ７离子在Ⅲ－Ⅴ族化合物半导体中的光谱和ＥＰＲ谱ｇ因子．此方法考虑了ｄ７离子ｄ电子与配体混合而导致ｄ轨道中ｅ和ｔ２轨道畸变的各向异性以及配体旋轨耦合作用对ｇ因子的贡献，用此方法解释了ＧａＰ，ＩｎＰ和ＧａＡｓ中Ｃｏ２＋的光谱和ｇ因子。
A modified crystl field theory model is established to sdudy the the optical spectra and EPR g factors for 3d 7 ions in Ⅲ Ⅴ semiconductors. In this model, the anisotropy of the distortion for the e and t 2 orbitals of the d electrons due to the mixture of the central ion with ligands is considered, and so the contributions of the spin orbit coupling of the ligands to g factor are included in the high order perturbation formula for g factor. Based on this model, the optical spectra and g factors for Co 2+ in GaP, InP and GaAs crystals are explained. The reasonableness of the results are discussed.
出处
《四川大学学报（自然科学版）》
CAS
CSCD
北大核心
1999年第1期72-76,共5页
Journal of Sichuan University(Natural Science Edition)
关键词
光谱
EPR谱
Ⅲ-Ⅴ族化合物
G因子
化合物半导体
crystal field theory, optical spectrum, spin orbit coupling, Co 2+ , Ⅲ-Ⅴ semiconductors
