摘要
为降低半导体激光主动照明红曝,选择波长880 nm大功率半导体激光器作为新型激光主动照明成像系统光源。根据光纤耦合过程光参数积不变原理,研制出波长880 nm大功率半导体激光器阵列单光纤耦合模块,利用光纤匀光作用使激光光束匀化整圆后用于激光主动照明。首次在波长880 nm大功率半导体激光器上采用阶梯反射镜光束整形方法,使激光光参数积与光纤匹配,激光高效耦合进入纤芯400μm、数值孔径0.22的光纤。室温条件下光纤耦合模块连续输出功率44.9 W,电光转化效率35%,波长880 nm大功率半导体激光器阵列光纤耦合模块,不仅其红曝小而且对应CMOS图像传感器光谱响应度较高,系统成像质量好。
Near-infrared laser diode arrays （LDA） are usually utilized as illuminated source for active laser illumination tech- nology. The severe red exposure of 808nm LDA deteriorates its potential for military application. Due to the low response of CMOS to light beyond 900nm, LDA with 880nm wavelength is a good candidate for active laser illumination. The 880 nm LDA has been chosen as a new type of laser active illumination source. As the beam of the high-power LDA has large divergence and uneveness, the 880 nm LDA can not be used directly for active illumination. Thus high power 880 nm fiber-coupled diode lasers have been developed with a pair of micro step-mirrors for beam shaping. As a result, output power about 44.9 W of the fiber-cou- pled laser diode module is achieved, and electro optical conversion efficiency is 35%.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2010年第7期1500-1504,共5页
High Power Laser and Particle Beams
基金
中国科学院长春光学精密机械与物理研究所三期创新工程项目
中国科学院知识创新工程领域前沿项目
吉林省与中国科学院院地合作项目(2007SYHZ0030)
科技部国际合作项目(2006DFA12600)
吉林省省长基金项目
