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RF磁控溅射法制备PbTe纳米薄膜 被引量:1

PbTe NANOFILMS PREPARED BY RF MAGNETRON SPUTTERING
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摘要 利用RF磁控溅射和真空退火方法制备了PbTe纳米薄膜.利用SEM、XRD、AFM和FTIR分别对制备的样品的表面形貌和颗粒大小、结构以及带隙宽度进行了测试.结果显示,在10W溅射功率下制备的PbTe纳米薄膜为纳米颗粒镶嵌薄膜,在20W功率下为PbTe颗粒膜.10W制备的纳米颗粒的平均直径为40nm左右,平均高度为5nm;20W制备的颗粒直径为100—400nm,平均高度为65nm;两个条件下制备的样品均表现出明显的〈100〉方向的择优取向性,并且20W的结晶质量比10W的好.FTIR分析显示10W和20W制备的薄膜的带隙宽度分别为0.340eV和0.343eV,都比块体带隙宽度大. PbTe nanofilms were prepared by magnetron sputtering and annealed in the vacuum chamber. The morphology, particles size, structure and band gap of the samples were analyzed by SEM, XRD, AFM and FTIR, respectively. The results show that PbTe nanoparticles embedded film was prepared at a sputtering power of 10 W, which has a diameter of about 40 nm and a height of 5 nm, and PbTe particles film was prepared at 20 W, which has a diameter of 100 -400 nm and a mean height of 65 nm. The samples prepared at both powers have a preferred orientation along the 〈 100 〉 direction and the crystalline quality of the sample at 20 W is better. The band gaps of films prepared at 10 W and 20 W are 0. 340 eV and 0. 343 eV, respectively, which are much larger than the typical value for bulk material.
出处 《山东师范大学学报(自然科学版)》 CAS 2010年第2期50-52,共3页 Journal of Shandong Normal University(Natural Science)
基金 山东省自然科学基金资助项目(2R2009FM028).
关键词 PBTE RF磁控溅射 退火 纳米颗粒 PbTe RF magnetron sputtering annealing nanoparticles
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