摘要
用剥层霍耳测量分析了ＭＢＥ生长ＨｇＣｄＴｅ薄膜的Ｂ离子注入的电学特性，测量了薄膜材料的载流子浓度和迁移率分布．当剥层腐蚀到结区，结区增透引起红外透射光谱的峰值提高．
The electrical property of boron implantation of MBE grown HgCdTe and the profile of carrier concentration and mobility measured by sheet Hall were presented. After etching the epilayer to p n junction position, the transmittance of this position was raised, which was ascribed to the high transmission of junction region.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1999年第1期19-22,共4页
Journal of Infrared and Millimeter Waves
基金
国家自然科学基金
