摘要
以ＳＦ６和ＳＦ６＋Ｏ２为刻蚀气体，采用等离子体刻蚀工艺成功地对化学气相淀积工艺制备的βＳｉＣ单晶薄膜进行了有效的刻蚀去除．实验指出当气体混合比约为４０％时，刻蚀速率达到最大值．俄歇能谱分析表明，在ＳＦ６和ＳＦ６＋Ｏ２气体中被刻蚀后的样品没有形成富Ｃ表面的ＳｉＣ层．研究结果为各种ＳｉＣ器件的研制奠定了必要的实验基础．
Abstract Plasma etching(PE) of cubic β SiC
single crystalline thin films produced via chemical vapor deposition(CVD) has been performed in
SF 6 and the SF 6+O 2 mixtures. Experimental results show that the maxima of etching rate are
reached when gas mixing ratio is about 40%. The Auger energy spectra indicate that PE process in
SF 6 and the SF 6+O 2 mixtures does not yield a residual SiC with a C rich surface. This technique
and experimental results may serve as the foundation of fabricating various devices of SiC.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1999年第3期550-555,共6页
Acta Physica Sinica
基金
国家自然科学基金
