摘要
制备了ＣｕＡｌ２Ｏ３ＭｇＦ２Ａｕ双势垒隧道发光结，分析了结加上一定偏压后的电子隧穿过程．指出由于构成隧道结的绝缘栅薄膜的厚度及禁带宽度的不同而导致双势垒中能级产生分裂，使电子通过栅区时产生共振隧穿现象．根据这一现象，并结合结的ＩＶ特性，对结的发光性能进行了讨论．这种结构的结与普通单势垒ＭＩＭ结相比，其发光效率（１０－６—１０－５）提高了近一个数量级，且发光光谱的波长范围及谱峰均向短波长方向移动。
Abstract The Cu Al 2O 3 MgF 2 Au double barrier tunnel junction has been fabricated. In this structure the electron resonant tunneling occur when a bias voltage is applied because of the existence of a series of separated energy levels in the barrier.Together with the analysis of I V characteristics of the junction, the light emission properties have been discussed in detail.It shows that the light emission efficency,light emission stability etc,have been improved greatly.The light emission spectrum shifts towards short wavelength region as compared with that of the single barrier metal/insulator/metal junction.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1999年第2期326-331,共6页
Acta Physica Sinica
基金
国家自然科学基金
