摘要
应用闭合磁场非平衡磁控溅射离子镀系统,研究了溅射靶电流、偏压和Ar流量对偏流密度的影响。结果表明,偏流密度随着偏压和靶电流的升高而增大,但随偏压的提高偏流密度的增加趋势趋于平缓;偏流密度随着Ar流量的增大而出现峰值。
The effects of sputtering target current,bias voltage and argon flow rate on the bias current density were investigated with the closed field unbalanced magnetron sputter ion plating（CFUMSIP） system.The results showed that the bias current density increases with either the increasing bias voltage or the increasing target current.However,the increment of bias current density with the bias voltage tends to moderate,but the increment will come up to its peak value with increasing argon flow rate.
出处
《真空》
CAS
北大核心
2010年第3期24-26,共3页
Vacuum
基金
太原市科技项目计划明星专项(08121030)
太原市大学生创新专项(09122025)
关键词
磁控溅射
离子镀
离化率
偏流密度
magnetron sputtering（MS）
ion plating
ionization rate
bias current density
