摘要
为实现低温烧结,采用固相反应法制备了H3BO3掺杂改性的BaO-3TiO2微波介质陶瓷,研究了H3BO3掺杂量对其烧结温度和介电性能的影响,并与H3BO3掺杂改性的BaTi4O9陶瓷进行了对比研究。结果表明,H3BO3掺杂能使BaO-3TiO2陶瓷的烧结温度降低到950℃,原因是烧结过程中形成了熔点约为899℃的液相BaB2O4。当掺杂质量分数为3%的H3BO3时,制备的BaO-3TiO2微波介质陶瓷具有良好的介电性能:εr=34.1,Q·f=9000GHz(4.0GHz),略优于H3BO3掺杂改性的BaTi4O9陶瓷。
H3BO3-doping modified BaO-3TiO2 microwave dielectric ceramics were prepared using the solid state reaction method to realize low-temperature sintering. Comparing with H3BO3-doping modified BaTi409 ceramics, the effects of the H3BO3-doping amount on the sintering temperature and dielectric properties of the BaO-3TiO2 ceramics were studied. The results show that the BaO-3TiO2 ceramics doped with H3BO3 can be sintered at a lower temperature of 950℃, which is attributed to the formation of BaB2O4 liquid phase whose melting point is around 899 ℃ during the sintering. With 3% （mass fraction） H3BO3-doping, the BaO-3TiO2 ceramic sintered at 950℃ for 2 h possesses good microwave dielectric properties： εr= 34.1 and Q ·f= 9 000 GHz （at 4.0 GHz）, which are a little better than those of H3BO3-doping modified BaTi4O9 ceramic.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2010年第5期11-13,共3页
Electronic Components And Materials
